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詳細摘要：The first and only commercially available Ca（OH）? crystals were grown using float zone synthesis technique to yield perfectly layered, large size, highly crystalline vdW layered crystals.

詳細摘要：【巨納】基于藍寶石基底的三角形單層二硫化鉬（1010mm）

詳細摘要：Chromium bromide （CrBr3） is a 2D ferromagnetic semiconductor with a Curie temperature of ~40K.

詳細摘要：CdI? is a layered semiconductor with indirect gap at 3.0 eV for bulk and its properties in the monolayer form is currently unknown.

詳細摘要：GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from （theoretically predicted） 1.68 eV of monolayer to 0.51 eV of bulk.

詳細摘要：Titanium bromide （TiBr3） is a 2D antiferromagnetic / ferromagnetic semiconductor.

詳細摘要：碘化鎵（碲摻雜）晶體（99.995%） GaTeI

詳細摘要：【巨納】基于二氧化硅基底的三角形單層二硫化鉬（10*10mm）

詳細摘要：二碘化鎳晶體（99.995%） NiI2
晶體類型：合成
晶體純度：＞99.995%

詳細摘要：The only commercially available PTAS organics. To date our PTAS materials enable many researchers to synthesize 2D CVD materials.

詳細摘要：二氯化鐵晶體（99.995%） FeCl2
晶體類型：合成
晶體純度：＞99.995%

詳細摘要：納米鹽/微米鹽

詳細摘要：Isolated monolayer thickness MoS2 are grown onto SiO2/Si substrates.

詳細摘要：Isolated monolayer thickness WS2 are grown onto c-cut （0001） sapphire substrates.

詳細摘要：Isolated monolayer thickness MoS2 are grown onto c-cut （0001） sapphire substrates.

詳細摘要：Isolated monolayer thickness WSe2 are grown onto c-cut （0001） sapphire substrates.

詳細摘要：This product contains full area coverage PtSe2 layers （single/multi） on c-cut sapphire substrates.

詳細摘要：This product contains full area coverage WSe2 monolayers on c-cut sapphire substrates.

詳細摘要：This product contains full area coverage WS2 monolayers on c-cut sapphire substrates.

詳細摘要：The first and only commercially available Mg（OH）? crystals were grown using float zone synthesis technique to yield perfectly layered, large size, highly crystalline vdW layered crystals.